PMN50XP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMN50XP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TSOP6

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PMN50XP datasheet

 ..1. Size:127K  nxp
 pmn50xp.pdf pdf_icon

PMN50XP

PMN50XP P-channel TrenchMOS extremely low level FET Rev. 02 2 October 2007 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features Low on-state

 ..2. Size:834K  cn vbsemi
 pmn50xp.pdf pdf_icon

PMN50XP

PMN50XP www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha

 9.1. Size:260K  nxp
 pmn50epe.pdf pdf_icon

PMN50XP

PMN50EPE 30 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg

 9.2. Size:225K  nxp
 pmn50upe.pdf pdf_icon

PMN50XP

PMN50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage 1

MOSTRAR MÁS

Otros transistores... PMN22XN, PMN27XPE, PMN27XPEA, PMN40UPE, PMN40UPEA, PMN42XPE, PMN42XPEA, PMN50UPE, IRF630, PMN70XPE, PMN70XPEA, PMN80XP, PMPB10XNE, PMPB11EN, PMPB12UN, PMPB13XNE, PMPB15XN