PMPB20EN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMPB20EN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm

Encapsulados: DFN2020MD-6

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PMPB20EN datasheet

 ..1. Size:268K  nxp
 pmpb20en.pdf pdf_icon

PMPB20EN

PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t

 8.1. Size:732K  nxp
 pmpb20xnea.pdf pdf_icon

PMPB20EN

PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology

 8.2. Size:295K  nxp
 pmpb20xpea.pdf pdf_icon

PMPB20EN

PMPB20XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 8.3. Size:250K  nxp
 pmpb20xpe.pdf pdf_icon

PMPB20EN

PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultr

MOSTRAR MÁS

Otros transistores... PMPB10XNE, PMPB11EN, PMPB12UN, PMPB13XNE, PMPB15XN, PMPB15XP, PMPB16XN, PMPB19XP, 4435, PMPB20UN, PMPB20XPE, PMPB215ENEA, PMPB23XNE, PMPB27EP, PMPB29XNE, PMPB29XPE, PMPB33XN