JANSR2N7395 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JANSR2N7395

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 5 V

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm

Encapsulados: TO205AF

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JANSR2N7395 datasheet

 ..1. Size:53K  intersil
 jansr2n7395.pdf pdf_icon

JANSR2N7395

JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev

 4.1. Size:53K  intersil
 jansr2n7398.pdf pdf_icon

JANSR2N7395

JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even

 4.2. Size:52K  intersil
 jansr2n7396.pdf pdf_icon

JANSR2N7395

JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t

 4.3. Size:52K  intersil
 jansr2n7399.pdf pdf_icon

JANSR2N7395

JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

MOSTRAR MÁS

Otros transistores... J113, J211, J212, JANSR2N7272, JANSR2N7275, JANSR2N7278, JANSR2N7292, JANSR2N7294, 7N65, JANSR2N7396, JANSR2N7398, JANSR2N7399, JANSR2N7400, JANSR2N7401, JANSR2N7402, JANSR2N7403, JANSR2N7404