PMPB47XP Todos los transistores

 

PMPB47XP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB47XP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: DFN2020MD-6
 

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PMPB47XP Datasheet (PDF)

 ..1. Size:237K  nxp
 pmpb47xp.pdf pdf_icon

PMPB47XP

PMPB47XP30 V, single P-channel Trench MOSFET5 December 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless ul

 9.1. Size:280K  nxp
 pmpb48epa.pdf pdf_icon

PMPB47XP

PMPB48EPA30 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection

 9.2. Size:235K  nxp
 pmpb48ep.pdf pdf_icon

PMPB47XP

PMPB48EP30 V, single P-channel Trench MOSFET10 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 9.3. Size:271K  nxp
 pmpb40sna.pdf pdf_icon

PMPB47XP

PMPB40SNA60 V N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package:

MOSTRAR MÁS

Otros transistores... PMPB23XNE , PMPB27EP , PMPB29XNE , PMPB29XPE , PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , IRLB4132 , PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA .

History: WM10N20M | SSDF9504 | HGA190N15S | ZXMN6A25GTA | DMN1032UCB4 | NIF5002NT3G | CEM6188

 

 
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