PS04N20SA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PS04N20SA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de PS04N20SA MOSFET
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PS04N20SA datasheet
ps04n20sa.pdf
PS04N20SA 20V Single Channel NMOSEFT Revision 1.0 Update Date Apr. 2011 ProsPower Microelectronics Co., Ltd PS04N20SA 20V Single Channel NMOSFET 2. Applications 1. General Description PWM applications The PS04N20SA uses advanced trench technology Load switch and design to provide excellent Rds(on) with low Power management gate charge. This device is suitable fo
aps04n60h.pdf
APS04N60H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620V D Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description APS04N60 series are from Advanced Power innovated design and G silicon process technology to achieve the l
aps04n60h-hf.pdf
APS04N60H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620V D Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description APS04N60 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC con
Otros transistores... PPMT20V4E, PPMT30V3, PPMT30V4, PPMT32V4, PPMT50V02, PPMUT20V3, PS03N20SA, PS03P20SA, 2N60, PS04P30SA, PS04P30SB, PS05N20DA, PS06N20DA, PS06N20DEA, PS06N30SA, PS06P30DA, PS06P30SA
History: HSSC3139
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