PS06N20DEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PS06N20DEA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0265 Ohm
Paquete / Cubierta: SOT-23-6
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PS06N20DEA Datasheet (PDF)
ps06n20dea.pdf
PS06N20DEA 20V Dual Channel NMOSEFT with 3KV ESD Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06N20DEA 20V Dual Channel NMOSFET with 3KV ESD 2. Applications 1. General Description Battery managementThe PS06N20DEA uses advanced trench Power managementtechnology and design to provide excellent Rds(on) DC-DC converterwith low gate cha
ps06n20da.pdf
PS06N20DA 20V Dual Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06N20DA 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery managementThe PS06N20DA uses advanced trench Power managementtechnology and design to provide excellent Rds(on) DC-DC converterwith low gate charge. This device is suitable
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IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C
ps06n30sa.pdf
PS06N30SA 30V Single Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06N30SA 30V Single Channel NMOSFET 2. Applications 1. General Description PWM applicationsThe PS06N30SA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge. This device is suitable fo
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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