PS06N30SA Todos los transistores

 

PS06N30SA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PS06N30SA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5.8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
   Carga de la puerta (Qg): 11 nC
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 99 pF
   Resistencia entre drenaje y fuente RDS(on): 0.033 Ohm
   Paquete / Cubierta: SOT-23

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PS06N30SA Datasheet (PDF)

 ..1. Size:297K  prospower
ps06n30sa.pdf

PS06N30SA
PS06N30SA

PS06N30SA 30V Single Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06N30SA 30V Single Channel NMOSFET 2. Applications 1. General Description PWM applicationsThe PS06N30SA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge. This device is suitable fo

 9.1. Size:420K  infineon
ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf

PS06N30SA
PS06N30SA

IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

 9.2. Size:411K  prospower
ps06n20da.pdf

PS06N30SA
PS06N30SA

PS06N20DA 20V Dual Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06N20DA 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery managementThe PS06N20DA uses advanced trench Power managementtechnology and design to provide excellent Rds(on) DC-DC converterwith low gate charge. This device is suitable

 9.3. Size:417K  prospower
ps06n20dea.pdf

PS06N30SA
PS06N30SA

PS06N20DEA 20V Dual Channel NMOSEFT with 3KV ESD Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06N20DEA 20V Dual Channel NMOSFET with 3KV ESD 2. Applications 1. General Description Battery managementThe PS06N20DEA uses advanced trench Power managementtechnology and design to provide excellent Rds(on) DC-DC converterwith low gate cha

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