PSMN005-55P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN005-55P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 230 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 103 nC
Tiempo de subida (tr): 180 nS
Conductancia de drenaje-sustrato (Cd): 1500 pF
Resistencia entre drenaje y fuente RDS(on): 0.0058 Ohm
Paquete / Cubierta: TO-220AB
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PSMN005-55P Datasheet (PDF)
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DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-55B; PSMN005-55PN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationPSMN005-55B;N-channel logic level TrenchMOS(TM) transistor PSMN005-55PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit
psmn005-55b p hg.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-55B; PSMN005-55PN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationPSMN005-55B;N-channel logic level TrenchMOS(TM) transistor PSMN005-55PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit
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DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-25DN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationN-channel logic level TrenchMOS(TM) transistor PSMN005-25DFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic
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DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-25DN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationN-channel logic level TrenchMOS(TM) transistor PSMN005-25DFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic
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PSMN005-75P/75BN-channel enhancement mode field-effect transistorRev. 01 26 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN005-75P in SOT78 (TO-220AB)PSMN005-75B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications Hi
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PSMN005-30KN-channel TrenchMOS SiliconMAX logic level FETRev. 2 22 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati
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PSMN005-75PN-channel TrenchMOS SiliconMAX standard level FETRev. 01 17 November 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap
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