PSMN005-75P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN005-75P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 920 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de PSMN005-75P MOSFET
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PSMN005-75P datasheet
psmn005-75p psmn005 75p 75b.pdf
PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications Hi
psmn005-75p.pdf
PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap
psmn005-55b p hg.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit
psmn005-25d.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic
Otros transistores... PSMG60-08, PSMN003-30B, PSMN003-30P, PSMN004-36B, PSMN004-55W, PSMN005-25D, PSMN005-55B, PSMN005-55P, IRF740, PSMN008-75P, PSMN009-100W, PSMN010-25YLC, PSMN010-55D, PSMN011-30YLC, PSMN011-60ML, PSMN011-60MS, PSMN012-25YLC
History: AGM307MNQ | KU3600N10W
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