PSMN005-75P Todos los transistores

 

PSMN005-75P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN005-75P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 165 nC
   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 920 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO-220AB
 

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PSMN005-75P Datasheet (PDF)

 ..1. Size:271K  philips
 psmn005-75p psmn005 75p 75b.pdf pdf_icon

PSMN005-75P

PSMN005-75P/75BN-channel enhancement mode field-effect transistorRev. 01 26 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN005-75P in SOT78 (TO-220AB)PSMN005-75B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications Hi

 ..2. Size:682K  nxp
 psmn005-75p.pdf pdf_icon

PSMN005-75P

PSMN005-75PN-channel TrenchMOS SiliconMAX standard level FETRev. 01 17 November 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 6.1. Size:120K  philips
 psmn005-55b p hg.pdf pdf_icon

PSMN005-75P

DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-55B; PSMN005-55PN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationPSMN005-55B;N-channel logic level TrenchMOS(TM) transistor PSMN005-55PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit

 6.2. Size:148K  philips
 psmn005-25d.pdf pdf_icon

PSMN005-75P

DISCRETE SEMICONDUCTORSDATA SHEETPSMN005-25DN-channel logic levelTrenchMOS(TM) transistorProduct specification October 1999Philips Semiconductors Product specificationN-channel logic level TrenchMOS(TM) transistor PSMN005-25DFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

MOSTRAR MÁS

Otros transistores... PSMG60-08 , PSMN003-30B , PSMN003-30P , PSMN004-36B , PSMN004-55W , PSMN005-25D , PSMN005-55B , PSMN005-55P , IRF740 , PSMN008-75P , PSMN009-100W , PSMN010-25YLC , PSMN010-55D , PSMN011-30YLC , PSMN011-60ML , PSMN011-60MS , PSMN012-25YLC .

History: HY1707P

 

 
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