PSMN009-100W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN009-100W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO-247
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PSMN009-100W Datasheet (PDF)
psmn009-100w.pdf

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psmn009-100b.pdf

PSMN009-100BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 July 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic
psmn009-100p.pdf

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PSMN009-100P/100BN-channel enhancement mode field-effect transistorRev. 01 29 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN009-100P in SOT78 (TO-220AB)PSMN009-100B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications
Otros transistores... PSMN003-30P , PSMN004-36B , PSMN004-55W , PSMN005-25D , PSMN005-55B , PSMN005-55P , PSMN005-75P , PSMN008-75P , 20N60 , PSMN010-25YLC , PSMN010-55D , PSMN011-30YLC , PSMN011-60ML , PSMN011-60MS , PSMN012-25YLC , PSMN012-80BS , PSMN013-100XS .



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