PSMN009-100W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN009-100W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-247

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PSMN009-100W datasheet

 ..1. Size:92K  philips
 psmn009-100w.pdf pdf_icon

PSMN009-100W

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 A g RDS(ON) 9 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

 3.1. Size:685K  nxp
 psmn009-100b.pdf pdf_icon

PSMN009-100W

PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 6 July 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

 3.2. Size:771K  nxp
 psmn009-100p.pdf pdf_icon

PSMN009-100W

PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 27 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 7.1. Size:271K  philips
 psmn009 100p 100b-01.pdf pdf_icon

PSMN009-100W

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications

MOSTRAR MÁS

Otros transistores... PSMN003-30P, PSMN004-36B, PSMN004-55W, PSMN005-25D, PSMN005-55B, PSMN005-55P, PSMN005-75P, PSMN008-75P, 20N60, PSMN010-25YLC, PSMN010-55D, PSMN011-30YLC, PSMN011-60ML, PSMN011-60MS, PSMN012-25YLC, PSMN012-80BS, PSMN013-100XS