PSMN010-25YLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN010-25YLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.8 nS

Cossⓘ - Capacitancia de salida: 166 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SOT-669

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PSMN010-25YLC datasheet

 ..1. Size:233K  nxp
 psmn010-25ylc.pdf pdf_icon

PSMN010-25YLC

PSMN010-25YLC N-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

 6.1. Size:100K  philips
 psmn010-55d.pdf pdf_icon

PSMN010-25YLC

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatible RDS(ON) 10.5 m (VGS = 10 V) g RDS(ON) 12 m (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK)

 6.2. Size:100K  philips
 psmn010-55d 4.pdf pdf_icon

PSMN010-25YLC

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatible RDS(ON) 10.5 m (VGS = 10 V) g RDS(ON) 12 m (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK)

 6.3. Size:731K  nxp
 psmn010-80yl.pdf pdf_icon

PSMN010-25YLC

PSMN010-80YL N-channel 80 V, 10 m logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and

MOSTRAR MÁS

Otros transistores... PSMN004-36B, PSMN004-55W, PSMN005-25D, PSMN005-55B, PSMN005-55P, PSMN005-75P, PSMN008-75P, PSMN009-100W, IRF540N, PSMN010-55D, PSMN011-30YLC, PSMN011-60ML, PSMN011-60MS, PSMN012-25YLC, PSMN012-80BS, PSMN013-100XS, PSMN013-100YSE