PSMN010-25YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN010-25YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.95 VQgⓘ - Carga de la puerta: 11 nC
trⓘ - Tiempo de subida: 9.8 nS
Cossⓘ - Capacitancia de salida: 166 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: SOT-669
Búsqueda de reemplazo de MOSFET PSMN010-25YLC
PSMN010-25YLC Datasheet (PDF)
psmn010-25ylc.pdf
PSMN010-25YLCN-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 25 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene
psmn010-55d.pdf
Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)
psmn010-55d 4.pdf
Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)
psmn010-80yl.pdf
PSMN010-80YLN-channel 80 V, 10 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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