PSMN010-25YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN010-25YLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.8 nS
Cossⓘ - Capacitancia de salida: 166 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: SOT-669
Búsqueda de reemplazo de PSMN010-25YLC MOSFET
PSMN010-25YLC Datasheet (PDF)
psmn010-25ylc.pdf

PSMN010-25YLCN-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 25 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene
psmn010-55d.pdf

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)
psmn010-55d 4.pdf

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)
psmn010-80yl.pdf

PSMN010-80YLN-channel 80 V, 10 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and
Otros transistores... PSMN004-36B , PSMN004-55W , PSMN005-25D , PSMN005-55B , PSMN005-55P , PSMN005-75P , PSMN008-75P , PSMN009-100W , IRF540 , PSMN010-55D , PSMN011-30YLC , PSMN011-60ML , PSMN011-60MS , PSMN012-25YLC , PSMN012-80BS , PSMN013-100XS , PSMN013-100YSE .
History: WMK53N60C4 | NDP606B | NP75N04YUG | NCE9435 | NTHD5904NT1 | IRLS3034-7PPBF | R6020ENZ
History: WMK53N60C4 | NDP606B | NP75N04YUG | NCE9435 | NTHD5904NT1 | IRLS3034-7PPBF | R6020ENZ



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
ksa992 | irfb4227 | irfb4110 | tip36c | bd139 transistor | irf840 datasheet | ge10001 | irf830