PSMN013-100XS Todos los transistores

 

PSMN013-100XS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN013-100XS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35.2 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 57.5 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 221 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0139 Ohm
   Paquete / Cubierta: TO-220F

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PSMN013-100XS Datasheet (PDF)

 ..1. Size:205K  nxp
psmn013-100xs.pdf

PSMN013-100XS
PSMN013-100XS

PSMN013-100XSN-channel 100V 13 m standard level MOSFET in TO220F (SOT186A)Rev. 2 6 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefit

 3.1. Size:170K  philips
psmn013-100ps.pdf

PSMN013-100XS
PSMN013-100XS

PSMN013-100PSN-channel 100V 13.9m standard level MOSFET in TO220.Rev. 02 22 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 3.2. Size:213K  philips
psmn013-100es.pdf

PSMN013-100XS
PSMN013-100XS

PSMN013-100ESN-channel 100 V 13.9 m standard level MOSFET in I2PAKRev. 02 19 February 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 3.3. Size:283K  nxp
psmn013-100yse.pdf

PSMN013-100XS
PSMN013-100XS

PSMN013-100YSEN-channel 100 V 13 m standard level MOSFET in LFPAK5618 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whil

 3.4. Size:731K  nxp
psmn013-100bs.pdf

PSMN013-100XS
PSMN013-100XS

PSMN013-100BSN-channel 100V 13.9m standard level MOSFET in D2PAK21 February 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc

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History: FDMS86101

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