PSMN013-30MLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN013-30MLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.8 nS
Cossⓘ - Capacitancia de salida: 131 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0169 Ohm
Paquete / Cubierta: LFPAK33
Búsqueda de reemplazo de MOSFET PSMN013-30MLC
PSMN013-30MLC Datasheet (PDF)
psmn013-30mlc.pdf
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psmn013-100es.pdf
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psmn013-60yl.pdf
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psmn013-100yse.pdf
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psmn013-100xs.pdf
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psmn013-80ys.pdf
PSMN013-80YSN-channel LFPAK 80 V 12.9 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
psmn013-100bs.pdf
PSMN013-100BSN-channel 100V 13.9m standard level MOSFET in D2PAK21 February 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc
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