PSMN013-30MLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN013-30MLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 38 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 39 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.95 V
   Carga de la puerta (Qg): 8 nC
   Tiempo de subida (tr): 9.8 nS
   Conductancia de drenaje-sustrato (Cd): 131 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0169 Ohm
   Paquete / Cubierta: LFPAK33

Búsqueda de reemplazo de MOSFET PSMN013-30MLC

PSMN013-30MLC Datasheet (PDF)

..1. Size:365K nxp
psmn013-30mlc.pdf

PSMN013-30MLCN-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

4.1. Size:399K philips
psmn013-30ll.pdf

PSMN013-30LLN-channel QFN3333 30 V 13 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

4.2. Size:902K nxp
psmn013-30ylc.pdf

PSMN013-30YLCN-channel 30 V 13.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

6.1. Size:170K philips
psmn013-100ps.pdf

PSMN013-100PSN-channel 100V 13.9m standard level MOSFET in TO220.Rev. 02 22 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

6.2. Size:221K philips
psmn013-80ys.pdf

PSMN013-80YSN-channel LFPAK 80 V 12.9 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

6.3. Size:213K philips
psmn013-100es.pdf

PSMN013-100ESN-channel 100 V 13.9 m standard level MOSFET in I2PAKRev. 02 19 February 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

6.4. Size:756K nxp
psmn013-60yl.pdf

PSMN013-60YLN-channel 60 V, 13 m logic level MOSFET in LFPAK563 June 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and l

6.5. Size:283K nxp
psmn013-100yse.pdf

PSMN013-100YSEN-channel 100 V 13 m standard level MOSFET in LFPAK5618 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whil

6.6. Size:205K nxp
psmn013-100xs.pdf

PSMN013-100XSN-channel 100V 13 m standard level MOSFET in TO220F (SOT186A)Rev. 2 6 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefit

6.7. Size:728K nxp
psmn013-80ys.pdf

6.8. Size:731K nxp
psmn013-100bs.pdf

PSMN013-100BSN-channel 100V 13.9m standard level MOSFET in D2PAK21 February 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc

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