PSMN016-100BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN016-100BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 148 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 189 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0288 Ohm
Paquete / Cubierta: D2-PAK
Búsqueda de reemplazo de PSMN016-100BS MOSFET
PSMN016-100BS Datasheet (PDF)
psmn016-100bs.pdf

PSMN016-100BSN-channel 100V 16 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc
psmn016-100ps.pdf

PSMN016-100PSN-channel 100V 16 m standard level MOSFET in TO220Rev. 01 1 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn016-100ys.pdf

PSMN016-100YSN-channel 100 V 16.3 m standard level MOSFET in LFPAKRev. 03 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tre
psmn016-100ps.pdf

PSMN016-100PSN-channel 100V 16 m standard level MOSFET in TO-220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff
Otros transistores... PSMN011-60ML , PSMN011-60MS , PSMN012-25YLC , PSMN012-80BS , PSMN013-100XS , PSMN013-100YSE , PSMN013-30MLC , PSMN015-60BS , IRFB4227 , WPH4003 , WT3139K , WTC3401 , WTX1013 , WVM11N80 , WVM12N10 , WVM13N50 , WVM15N20 .
History: MDH3331RH | AP2325GEN | RFL1N18 | SSF3745 | BSV236SP | KI8810T | NTGS4141NT1G
History: MDH3331RH | AP2325GEN | RFL1N18 | SSF3745 | BSV236SP | KI8810T | NTGS4141NT1G



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