PSMN016-100BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN016-100BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 148 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 40 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 40 nC
Tiempo de subida (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 189 pF
Resistencia entre drenaje y fuente RDS(on): 0.0288 Ohm
Paquete / Cubierta: D2-PAK
Búsqueda de reemplazo de MOSFET PSMN016-100BS
PSMN016-100BS Datasheet (PDF)
psmn016-100bs.pdf
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psmn016-100ys.pdf
PSMN016-100YSN-channel 100 V 16.3 m standard level MOSFET in LFPAKRev. 03 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tre
psmn016-100ps.pdf
PSMN016-100PSN-channel 100V 16 m standard level MOSFET in TO-220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff
psmn016-100ys.pdf
PSMN016-100YSN-channel 100 V 16.3 m standard level MOSFET in LFPAKRev. 4 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanc
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