PSMN027-100XS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN027-100XS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.5 nS
Cossⓘ - Capacitancia de salida: 115 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0268 Ohm
Paquete / Cubierta: TO-220F
- Selección de transistores por parámetros
PSMN027-100XS Datasheet (PDF)
psmn027-100xs.pdf

PSMN027-100XSN-channel 100V 26.8 m standard level MOSFET in TO220F (SOT186A)Rev. 2 6 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
psmn027-100ps.pdf

PSMN027-100PSN-channel 100V 26.8 m standard level MOSFET in TO220Rev. 02 19 February 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn027-100ps.pdf

PSMN027-100PSN-channel 100V 26.8 m standard level MOSFET in TO220Rev. 3 12 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic
psmn027-100bs.pdf

PSMN027-100BSN-channel 100V 26.8 m standard level MOSFET in D2PAK.Rev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: VBA4216 | DMN2170U | FDMS0310AS | P1203BD | AP9474GM | BSC034N10LS5 | SWF10N70K
History: VBA4216 | DMN2170U | FDMS0310AS | P1203BD | AP9474GM | BSC034N10LS5 | SWF10N70K



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