PSMN038-100YL Todos los transistores

 ..1. Size:320K  nxp
 psmn038-100yl.pdf

PSMN038-100YL N-channel 100 V 37.5 m logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency

 7.1. Size:271K  nxp
 psmn038 100k.pdf

PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability PSMN038-100K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switch

 8.1. Size:297K  philips
 psmn035 150 series.pdf

PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 22 February 2001 Product specification 1. Description SiliconMAX 1 products use the latest TrenchMOS 2 technology to achieve the lowest possible on-state resistance for each package. Product availability PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D2-PAK). 2. Features Fast swi

 8.2. Size:180K  philips
 psmn030-150p.pdf

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 8.3. Size:152K  philips
 psmn035-150 series hg 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma

 8.4. Size:246K  philips
 psmn034-100ps.pdf

PSMN034-100PS N-channel 100 V 34.5 m standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 8.5. Size:219K  philips
 psmn030-60ys.pdf

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 8.6. Size:387K  philips
 psmn035-100ls.pdf

PSMN035-100LS N-channel QFN3333 100 V 32m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effic

 8.7. Size:236K  philips
 psmn039-100ys.pdf

PSMN039-100YS N-channel LFPAK 100 V 39.5 m standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 8.8. Size:833K  nxp
 psmn030-150p.pdf

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 8.9. Size:233K  nxp
 psmn034-100bs.pdf

PSMN034-100BS N-channel 100 V 34.5 m standard level MOSFET in D2PAK. Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 8.10. Size:805K  nxp
 psmn034-100ps.pdf

PSMN034-100PS N-channel 100 V 34.5 m standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 8.11. Size:820K  nxp
 psmn030-60ys.pdf

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 8.12. Size:801K  nxp
 psmn039-100ys.pdf

PSMN039-100YS N-channel LFPAK 100 V 39.5 m standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM

 8.13. Size:895K  cn vbsemi
 psmn035-150.pdf

PSMN035-150 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

 8.14. Size:289K  inchange semiconductor
 psmn034-100ps.pdf

isc N-Channel MOSFET Transistor PSMN034-100PS FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and