PSMN040-100MSE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN040-100MSE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 91 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14.1 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0366 Ohm
   Paquete / Cubierta: LFPAK33

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PSMN040-100MSE Datasheet (PDF)

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psmn040-100mse.pdf

PSMN040-100MSEN-channel 100 V 36.6 m standard level MOSFET in LFPAK33designed specifically for high power PoE applications26 March 2013 Product data sheet1. General descriptionNew standards and proprietary approaches are enabling Power-over-Ethernet (PoE)systems capable of delivering up to 90W to each powered device (PD). Such solutionsplace increased demands on the power sourci

6.1. Size:87K philips
psmn040-200w.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 AgRDS(ON) 40 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

8.1. Size:233K philips
psmn045-80ys.pdf

PSMN045-80YSN-channel LFPAK 80 V 45 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

8.2. Size:352K nxp
psmn041-80yl.pdf

PSMN041-80YLN-channel 80 V 41 m logic level MOSFET in LFPAK561 May 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) inLFPAK56 package. This product has been designed and qualified for use in a wide rangeof industrial, communications and domestic equipment.2. Features and benefits High efficiency due

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