PSMN1R1-40BS Todos los transistores

 

PSMN1R1-40BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN1R1-40BS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 306 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66 nS

Cossⓘ - Capacitancia de salida: 2042 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm

Encapsulados: D2PAK

 Búsqueda de reemplazo de PSMN1R1-40BS MOSFET

- Selecciónⓘ de transistores por parámetros

 

PSMN1R1-40BS datasheet

 ..1. Size:222K  nxp
psmn1r1-40bs.pdf pdf_icon

PSMN1R1-40BS

PSMN1R1-40BS N-channel 40 V 1.3 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits H

 6.1. Size:246K  philips
psmn1r1-30pl.pdf pdf_icon

PSMN1R1-40BS

PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 6.2. Size:238K  philips
psmn1r1-30el.pdf pdf_icon

PSMN1R1-40BS

PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 6.3. Size:384K  philips
psmn1r1-25ylc.pdf pdf_icon

PSMN1R1-40BS

PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

Otros transistores... PSMN040-200W , PSMN041-80YL , PSMN050-80BS , PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , PSMN1R0-40YLD , IRFZ24N , PSMN1R2-30YLD , PSMN1R4-30YLD , PSMN1R4-40YLD , PSMN1R5-30BLE , PSMN1R6-30BL , PSMN1R6-40YLC , PSMN1R8-30BL , PSMN1R8-40YLC .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG

 

 

 

Popular searches

tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n | mn2488 | irfb438 | mj21193g | irf3710 pinout

 

 

↑ Back to Top
.