PSMN1R4-40YLD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R4-40YLD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 238 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 49 nS
Cossⓘ - Capacitancia de salida: 1543 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Encapsulados: LFPAK56
Búsqueda de reemplazo de PSMN1R4-40YLD MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN1R4-40YLD datasheet
psmn1r4-40yld.pdf
PSMN1R4-40YLD N-channel 40 V 1.4 m logic level MOSFET in LFPAK56 using NextPower-S3 technology 26 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. F
psmn1r4-30yld.pdf
PSMN1R4-30YLD N-channel 30 V, 1.4 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit
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psmn1r5-30yl.pdf
PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn1r5-40ps.pdf
PSMN1R5-40PS N-channel 40 V 1.6 m standard level MOSFET in TO220. Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High e
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PSMN1R2-25YLC N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
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psmn1r7-30yl.pdf
PSMN1R7-30YL N-channel 30 V 1.7 m logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p
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PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn1r8-30pl.pdf
PSMN1R8-30PL N-channel 30 V, 1.8 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
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PSMN1R5-30YLC N-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r5-25yl.pdf
PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic
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PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High
psmn1r2-25yl.pdf
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psmn1r1-25ylc.pdf
PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r2-30ylc.pdf
PSMN1R2-30YLC N-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
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PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
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psmn1r9-40pl.pdf
PSMN1R9-40PL N-channel 40 V, 1.7 m logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio
psmn1r5-40ps.pdf
PSMN1R5-40PS N-channel 40 V 1.6 m standard level MOSFET in TO220 15 July 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching and conduction losses Robus
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PSMN1R6-30PL N-channel 30 V 1.7 m logic level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit
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psmn1r0-40yld.pdf
PSMN1R0-40YLD N-channel 40 V 1.1 m logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli
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PSMN1R8-30MLH N-channel 30 V, 2.1 m , 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-s
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PSMN1R1-30PL N-channel 30 V 1.3 m logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction l
psmn1r8-30pl.pdf
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PSMN1R5-30YLC N-channel 30 V 1.55m logic level MOSFET in LFPAK using NextPower technology Rev. 2 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r5-25yl.pdf
PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic
psmn1r5-30ble.pdf
PSMN1R5-30BLE N-channel 30 V 1.5 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe
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PSMN1R7-60BS N-channel 60 V 2 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic
psmn1r6-30mlh.pdf
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psmn1r8-30bl.pdf
PSMN1R8-30BL N-channel 30 V, 1.8 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du
psmn1r1-40bs.pdf
PSMN1R1-40BS N-channel 40 V 1.3 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits H
psmn1r5-40ysd.pdf
PSMN1R5-40YSD N-channel 40 V, 1.5 m , 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance
psmn1r2-25yld.pdf
PSMN1R2-25YLD N-channel 25 V, 1.2 m , 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi
psmn1r6-40ylc.pdf
PSMN1R6-40YLC N-channel 40 V 1.55 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High
psmn1r1-30el.pdf
PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction los
psmn1r6-30bl.pdf
PSMN1R6-30BL N-channel 30 V 1.9 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn1r0-40ysh.pdf
PSMN1R0-40YSH N-channel 40 V, 1 m , 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance
psmn1r0-25yld.pdf
PSMN1R0-25YLD N-channel 25 V, 1.0 m , 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi
psmn1r5-40es.pdf
PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High
psmn1r2-30yld.pdf
PSMN1R2-30YLD N-channel 30 V, 1.2 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit
psmn1r9-40ysd.pdf
PSMN1R9-40YSD N-channel 40 V, 1.9 m , 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance
psmn1r2-25yl.pdf
PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro
psmn1r5-25mlh.pdf
PSMN1R5-25MLH N-channel 25 V, 1.81 m , 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast
psmn1r1-25ylc.pdf
PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r7-40yld.pdf
PSMN1R7-40YLD N-channel 40 V, 1.8 m , 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power
psmn1r8-40ylc.pdf
PSMN1R8-40YLC N-channel 40 V 1.8 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High r
psmn1r7-25yld.pdf
PSMN1R7-25YLD N-channel 25 V, 1.75 m , 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w
psmn1r2-30ylc.pdf
PSMN1R2-30YLC N-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technology Rev. 1 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r9-40pl.pdf
isc N-Channel MOSFET Transistor PSMN1R9-40PL FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r5-40ps.pdf
isc N-Channel MOSFET Transistor PSMN1R5-40PS FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r6-30pl.pdf
isc N-Channel MOSFET Transistor PSMN1R6-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r8-30pl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r5-30ble.pdf
isc N-Channel MOSFET Transistor PSMN1R5-30BLE FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r7-60bs.pdf
isc N-Channel MOSFET Transistor PSMN1R7-60BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r8-30bl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r6-30bl.pdf
isc N-Channel MOSFET Transistor PSMN1R6-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 1.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
psmn1r5-40es.pdf
isc N-Channel MOSFET Transistor PSMN1R5-40ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
Otros transistores... PSMN075-100MSE , PSMN0R7-25YLD , PSMN0R9-30YLD , PSMN1R0-30YLD , PSMN1R0-40YLD , PSMN1R1-40BS , PSMN1R2-30YLD , PSMN1R4-30YLD , P60NF06 , PSMN1R5-30BLE , PSMN1R6-30BL , PSMN1R6-40YLC , PSMN1R8-30BL , PSMN1R8-40YLC , PSMN1R9-40PL , PSMN2R0-30BL , PSMN2R0-30YLD .
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