PSMN1R6-40YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN1R6-40YLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 288 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.95 V
   Qgⓘ - Carga de la puerta: 126 nC
   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 1063 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: LFPAK

Búsqueda de reemplazo de MOSFET PSMN1R6-40YLC

PSMN1R6-40YLC Datasheet (PDF)

..1. Size:230K nxp
psmn1r6-40ylc.pdf

PSMN1R6-40YLCN-channel 40 V 1.55 m logic level MOSFET in LFPAK usingNextPower technology22 August 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High

6.1. Size:225K philips
psmn1r6-30pl.pdf

PSMN1R6-30PLN-channel 30 V 1.7 m logic level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

6.2. Size:726K nxp
psmn1r6-30pl.pdf

6.3. Size:299K nxp
psmn1r6-30mlh.pdf

PSMN1R6-30MLHN-channel 30 V, 1.9 m, 160 A logic level MOSFET inLFPAK33 using NextPowerS3 technology12 November 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 Aand optimized for DC load switch and hot-swap applicat

6.4. Size:213K nxp
psmn1r6-30bl.pdf

PSMN1R6-30BLN-channel 30 V 1.9 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

6.5. Size:262K inchange semiconductor
psmn1r6-30pl.pdf

isc N-Channel MOSFET Transistor PSMN1R6-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.6. Size:255K inchange semiconductor
psmn1r6-30bl.pdf

isc N-Channel MOSFET Transistor PSMN1R6-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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