PSMN1R8-40YLC Todos los transistores

 

PSMN1R8-40YLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN1R8-40YLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 272 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.95 V

Carga de compuerta (Qg): 96 nC

Tiempo de elevación (tr): 37 nS

Conductancia de drenaje-sustrato (Cd): 825 pF

Resistencia drenaje-fuente RDS(on): 0.0018 Ohm

Empaquetado / Estuche: LFPAK

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PSMN1R8-40YLC Datasheet (PDF)

1.1. psmn1r8-40ylc.pdf Size:233K _update_mosfet

PSMN1R8-40YLC
PSMN1R8-40YLC

PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High r

2.1. psmn1r8-30bl.pdf Size:209K _update_mosfet

PSMN1R8-40YLC
PSMN1R8-40YLC

PSMN1R8-30BL N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency du

2.2. psmn1r8-30pl.pdf Size:218K _philips2

PSMN1R8-40YLC
PSMN1R8-40YLC

PSMN1R8-30PL N-channel 30 V, 1.8 m? logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to l

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