PSMN2R0-30BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN2R0-30BL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 211 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.15 V
   Qgⓘ - Carga de la puerta: 107 nC
   trⓘ - Tiempo de subida: 125 nS
   Cossⓘ - Capacitancia de salida: 1410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET PSMN2R0-30BL

PSMN2R0-30BL Datasheet (PDF)

..1. Size:208K nxp
psmn2r0-30bl.pdf

PSMN2R0-30BLN-channel 30 V 2.1 m logic level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

..2. Size:254K inchange semiconductor
psmn2r0-30bl.pdf

isc N-Channel MOSFET Transistor PSMN2R0-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

4.1. Size:238K philips
psmn2r0-30yl.pdf

PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

4.2. Size:212K philips
psmn2r0-30pl.pdf

PSMN2R0-30PLN-channel 30 V 2.1 m logic level MOSFETRev. 01 24 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

4.3. Size:221K nxp
psmn2r0-30yle.pdf

PSMN2R0-30YLEN-channel 30 V 2 m logic level MOSFET in LFPAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe op

4.4. Size:823K nxp
psmn2r0-30yl.pdf

4.5. Size:230K nxp
psmn2r0-30yld.pdf

PSMN2R0-30YLDN-channel 30 V, 2.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 December 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

4.6. Size:713K nxp
psmn2r0-30pl.pdf

4.7. Size:261K inchange semiconductor
psmn2r0-30pl.pdf

isc N-Channel MOSFET Transistor PSMN2R0-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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