PSMN2R0-30BL Todos los transistores

 ..1. Size:208K  nxp
 psmn2r0-30bl.pdf

PSMN2R0-30BL N-channel 30 V 2.1 m logic level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 ..2. Size:254K  inchange semiconductor
 psmn2r0-30bl.pdf

isc N-Channel MOSFET Transistor PSMN2R0-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 2.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.1. Size:238K  philips
 psmn2r0-30yl.pdf

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

 4.2. Size:212K  philips
 psmn2r0-30pl.pdf

PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit

 4.3. Size:221K  nxp
 psmn2r0-30yle.pdf

PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe op

 4.4. Size:823K  nxp
 psmn2r0-30yl.pdf

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

 4.5. Size:230K  nxp
 psmn2r0-30yld.pdf

PSMN2R0-30YLD N-channel 30 V, 2.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 December 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET

 4.6. Size:713K  nxp
 psmn2r0-30pl.pdf

PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit

 4.7. Size:261K  inchange semiconductor
 psmn2r0-30pl.pdf

isc N-Channel MOSFET Transistor PSMN2R0-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 2.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general