PSMN3R3-80BS Todos los transistores

 ..1. Size:222K  nxp
 psmn3r3-80bs.pdf

PSMN3R3-80BS N-channel 80 V, 3.5 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie

 ..2. Size:255K  inchange semiconductor
 psmn3r3-80bs.pdf

isc N-Channel MOSFET Transistor PSMN3R3-80BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.1. Size:191K  nxp
 psmn3r3-80ps.pdf

PSMN3R3-80PS N-channel 80 V, 3.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici

 4.2. Size:184K  nxp
 psmn3r3-80es.pdf

PSMN3R3-80ES N-channel 80 V, 3.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

 4.3. Size:261K  inchange semiconductor
 psmn3r3-80ps.pdf

isc N-Channel MOSFET Transistor PSMN3R3-80PS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 4.4. Size:255K  inchange semiconductor
 psmn3r3-80es.pdf

isc N-Channel MOSFET Transistor PSMN3R3-80ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general