PSMN3R3-80BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN3R3-80BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 306 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 104 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 701 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET PSMN3R3-80BS

PSMN3R3-80BS Datasheet (PDF)

..1. Size:222K nxp
psmn3r3-80bs.pdf

PSMN3R3-80BSN-channel 80 V, 3.5 m standard level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

..2. Size:255K inchange semiconductor
psmn3r3-80bs.pdf

isc N-Channel MOSFET Transistor PSMN3R3-80BSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

4.1. Size:191K nxp
psmn3r3-80ps.pdf

PSMN3R3-80PSN-channel 80 V, 3.3 m standard level MOSFET in TO-220Rev. 1 27 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

4.2. Size:184K nxp
psmn3r3-80es.pdf

PSMN3R3-80ESN-channel 80 V, 3.3 m standard level MOSFET in I2PAKRev. 1 31 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

4.3. Size:261K inchange semiconductor
psmn3r3-80ps.pdf

isc N-Channel MOSFET Transistor PSMN3R3-80PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

4.4. Size:255K inchange semiconductor
psmn3r3-80es.pdf

isc N-Channel MOSFET Transistor PSMN3R3-80ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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