PSMN3R4-30BLE Todos los transistores

 

PSMN3R4-30BLE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN3R4-30BLE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 101 nS
   Cossⓘ - Capacitancia de salida: 909 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: D2PAK
 

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PSMN3R4-30BLE Datasheet (PDF)

 ..1. Size:221K  nxp
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PSMN3R4-30BLE

PSMN3R4-30BLEN-channel 30 V 3.4 m logic level MOSFET in D2PAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe

 ..2. Size:255K  inchange semiconductor
psmn3r4-30ble.pdf pdf_icon

PSMN3R4-30BLE

isc N-Channel MOSFET Transistor PSMN3R4-30BLEFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 2.1. Size:210K  nxp
psmn3r4-30bl.pdf pdf_icon

PSMN3R4-30BLE

PSMN3R4-30BLN-channel 30 V 3.3 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 2.2. Size:254K  inchange semiconductor
psmn3r4-30bl.pdf pdf_icon

PSMN3R4-30BLE

isc N-Channel MOSFET Transistor PSMN3R4-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Otros transistores... PSMN3R0-30MLC , PSMN3R0-30YLD , PSMN3R0-60BS , PSMN3R3-60PL , PSMN3R3-80BS , PSMN3R3-80ES , PSMN3R3-80PS , PSMN3R4-30BL , IRF540 , PSMN3R8-100BS , PSMN3R9-25MLC , PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL .

History: 2SK1052 | IRFH5025 | IRLL024ZTR | SST65R600S2 | NTZD3154NT1G | R6035ENZ1 | NCE4435X

 

 
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