PSMN4R2-60PL Todos los transistores

 

PSMN4R2-60PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN4R2-60PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 263 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 151 nC
   trⓘ - Tiempo de subida: 97 nS
   Cossⓘ - Capacitancia de salida: 703 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET PSMN4R2-60PL

 

PSMN4R2-60PL Datasheet (PDF)

 ..1. Size:254K  nxp
psmn4r2-60pl.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R2-60PLN-channel 60 V, 3.9 m logic level MOSFET in SOT785 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio

 6.1. Size:275K  nxp
psmn4r2-30mld.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R2-30MLDN-channel 30 V, 4.2 m logic level MOSFET in LFPAK33using NextPowerS3 Technology19 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 8.1. Size:231K  philips
psmn4r5-40ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R5-40PSN-channel 40 V 4.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 8.2. Size:238K  philips
psmn4r3-80ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 8.3. Size:396K  philips
psmn4r0-25ylc.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-25YLCN-channel 25 V 4.5 m logic level MOSFET in LFPAKRev. 01 2 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Po

 8.4. Size:328K  philips
psmn4r5-30ylc.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R5-30YLCN-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 5 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.5. Size:231K  philips
psmn4r3-80es.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 8.6. Size:205K  philips
psmn4r4-80ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.

 8.7. Size:335K  philips
psmn4r1-30ylc.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R1-30YLCN-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.8. Size:226K  philips
psmn4r6-60ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R6-60PSN-channel 60 V, 4.6 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

 8.9. Size:233K  philips
psmn4r0-30yl.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-30YLN-channel 30 V 4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 8.10. Size:215K  philips
psmn4r3-30pl.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-30PLN-channel 30 V 4.3 m logic level MOSFETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

 8.11. Size:374K  philips
psmn4r0-40ys.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-40YSN-channel LFPAK 40 V 4.2 m standard level MOSFETRev. 02 12 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.12. Size:186K  nxp
psmn4r3-100es.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-100ESN-channel 100 V 4.3 m standard level MOSFET in I2PAKRev. 1 31 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef

 8.13. Size:725K  nxp
psmn4r1-60yl.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R1-60YLN-channel 60 V, 4.1 m logic level MOSFET in LFPAK5620 October 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 8.14. Size:733K  nxp
psmn4r5-40ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R5-40PSN-channel 40 V 4.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 8.15. Size:371K  nxp
psmn4r3-80bs.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-80BSN-channel 80 V, 4.3 m standard level MOSFET in D2PAKRev. 01 27 December 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

 8.16. Size:821K  nxp
psmn4r3-80ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 8.17. Size:1002K  nxp
psmn4r0-25ylc.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-25YLCN-channel 25 V 4.5 m logic level MOSFET in LFPAKRev. 01 2 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Po

 8.18. Size:263K  nxp
psmn4r0-60ys.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-60YSN-channel LFPAK 60 V, 4.0 m standard level FET14 May 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of telecom, industrial and domesticequipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge

 8.19. Size:1097K  nxp
psmn4r5-30ylc.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R5-30YLCN-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 5 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 8.20. Size:215K  nxp
psmn4r5-40bs.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R5-40BSN-channel 40 V 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 8.21. Size:252K  nxp
psmn4r8-100pse.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R8-100PSEN-channel 100 V 5 m standard level MOSFET with improvedSOA in TO220 package11 July 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET with improved SOA in a TO220 package. Part ofNXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstandsubstantial in-rush and fault condition currents during turn on/off, whilst offe

 8.22. Size:820K  nxp
psmn4r3-80es.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d

 8.23. Size:210K  nxp
psmn4r6-60bs.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R6-60BSN-channel 60 V, 4.4 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic

 8.24. Size:206K  nxp
psmn4r3-30bl.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-30BLN-channel 30 V 4.1 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 8.25. Size:708K  nxp
psmn4r4-80ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.

 8.26. Size:193K  nxp
psmn4r3-100ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-100PSN-channel 100 V 4.3 m standard level MOSFET in TO-220Rev. 1 27 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High

 8.27. Size:215K  nxp
psmn4r6-100xs.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R6-100XSN-channel 100V 4.6 m standard level MOSFET in TO220F (SOT186A)Rev. 1 3 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefit

 8.28. Size:216K  nxp
psmn4r4-80bs.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R4-80BSN-channel 80 V, 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 8.29. Size:745K  nxp
psmn4r1-30ylc.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R1-30YLCN-channel 30 V 4.35m logic level MOSFET in LFPAK usingNextPower technology12 February 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High reliability Power SO8

 8.30. Size:971K  nxp
psmn4r6-60ps.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R6-60PSN-channel 60 V, 4.6 m standard level MOSFET in TO220Rev. 3 18 April 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi

 8.31. Size:819K  nxp
psmn4r0-30yl.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-30YLN-channel 30 V 4 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 8.32. Size:361K  nxp
psmn4r0-30yld.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-30YLDN-channel 30 V, 4.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 October 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs

 8.33. Size:716K  nxp
psmn4r3-30pl.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R3-30PLN-channel 30 V 4.3 m logic level MOSFETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

 8.34. Size:364K  nxp
psmn4r4-30mlc.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R4-30MLCN-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

 8.35. Size:951K  nxp
psmn4r0-40ys.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R0-40YSN-channel LFPAK 40 V 4.2 m standard level MOSFETRev. 02 12 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.36. Size:262K  nxp
psmn4r8-100bse.pdf

PSMN4R2-60PL
PSMN4R2-60PL

PSMN4R8-100BSEN-channel 100 V 4.8 m standard level MOSFET in D2PAK12 April 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whilst off

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