PSMN4R3-100PS Todos los transistores

 

PSMN4R3-100PS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN4R3-100PS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 338 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 91 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm

Encapsulados: TO-220AB

 Búsqueda de reemplazo de PSMN4R3-100PS MOSFET

- Selecciónⓘ de transistores por parámetros

 

PSMN4R3-100PS datasheet

 ..1. Size:193K  nxp
psmn4r3-100ps.pdf pdf_icon

PSMN4R3-100PS

PSMN4R3-100PS N-channel 100 V 4.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

 3.1. Size:186K  nxp
psmn4r3-100es.pdf pdf_icon

PSMN4R3-100PS

PSMN4R3-100ES N-channel 100 V 4.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High ef

 6.1. Size:238K  philips
psmn4r3-80ps.pdf pdf_icon

PSMN4R3-100PS

PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

 6.2. Size:231K  philips
psmn4r3-80es.pdf pdf_icon

PSMN4R3-100PS

PSMN4R3-80ES N-channel 80 V, 4.3 m standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d

Otros transistores... PSMN3R9-25MLC , PSMN3R9-60PS , PSMN3R9-60XS , PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , IRFP260N , PSMN4R3-30BL , PSMN4R3-80BS , PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE .

History: AOB210L | SSF60R140SFD

 

 

 


History: AOB210L | SSF60R140SFD

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG

 

 

 

Popular searches

2sd1047 | 2n3035 | ksc1815 | bu406 | j201 datasheet | 2n5088 datasheet | irfp064n | tip31 transistor

 

 

↑ Back to Top
.