PSMN4R8-100PSE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN4R8-100PSE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 405 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 65 nS
Cossⓘ - Capacitancia de salida: 674 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de PSMN4R8-100PSE MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN4R8-100PSE datasheet
..1. Size:252K nxp
psmn4r8-100pse.pdf 
PSMN4R8-100PSE N-channel 100 V 5 m standard level MOSFET with improved SOA in TO220 package 11 July 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offe
3.1. Size:262K nxp
psmn4r8-100bse.pdf
PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK 12 April 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot- swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst off
8.1. Size:231K philips
psmn4r5-40ps.pdf
PSMN4R5-40PS N-channel 40 V 4.6 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
8.2. Size:238K philips
psmn4r3-80ps.pdf
PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d
8.3. Size:396K philips
psmn4r0-25ylc.pdf
PSMN4R0-25YLC N-channel 25 V 4.5 m logic level MOSFET in LFPAK Rev. 01 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Po
8.4. Size:328K philips
psmn4r5-30ylc.pdf
PSMN4R5-30YLC N-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 5 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
8.5. Size:231K philips
psmn4r3-80es.pdf
PSMN4R3-80ES N-channel 80 V, 4.3 m standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d
8.6. Size:205K philips
psmn4r4-80ps.pdf
PSMN4R4-80PS N-channel 80 V, 4.1 m standard level FET Rev. 01 18 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.
8.7. Size:335K philips
psmn4r1-30ylc.pdf
PSMN4R1-30YLC N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
8.8. Size:226K philips
psmn4r6-60ps.pdf
PSMN4R6-60PS N-channel 60 V, 4.6 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effi
8.9. Size:233K philips
psmn4r0-30yl.pdf
PSMN4R0-30YL N-channel 30 V 4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit
8.10. Size:215K philips
psmn4r3-30pl.pdf
PSMN4R3-30PL N-channel 30 V 4.3 m logic level MOSFET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit
8.11. Size:374K philips
psmn4r0-40ys.pdf
PSMN4R0-40YS N-channel LFPAK 40 V 4.2 m standard level MOSFET Rev. 02 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
8.12. Size:254K nxp
psmn4r2-60pl.pdf
PSMN4R2-60PL N-channel 60 V, 3.9 m logic level MOSFET in SOT78 5 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio
8.13. Size:186K nxp
psmn4r3-100es.pdf
PSMN4R3-100ES N-channel 100 V 4.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High ef
8.14. Size:725K nxp
psmn4r1-60yl.pdf
PSMN4R1-60YL N-channel 60 V, 4.1 m logic level MOSFET in LFPAK56 20 October 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon
8.15. Size:733K nxp
psmn4r5-40ps.pdf
PSMN4R5-40PS N-channel 40 V 4.6 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
8.16. Size:371K nxp
psmn4r3-80bs.pdf
PSMN4R3-80BS N-channel 80 V, 4.3 m standard level MOSFET in D2PAK Rev. 01 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effi
8.17. Size:821K nxp
psmn4r3-80ps.pdf
PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d
8.18. Size:1002K nxp
psmn4r0-25ylc.pdf
PSMN4R0-25YLC N-channel 25 V 4.5 m logic level MOSFET in LFPAK Rev. 01 2 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Po
8.19. Size:263K nxp
psmn4r0-60ys.pdf
PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 m standard level FET 14 May 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge
8.20. Size:1097K nxp
psmn4r5-30ylc.pdf
PSMN4R5-30YLC N-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 5 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
8.21. Size:275K nxp
psmn4r2-30mld.pdf
PSMN4R2-30MLD N-channel 30 V, 4.2 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 19 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET
8.22. Size:215K nxp
psmn4r5-40bs.pdf
PSMN4R5-40BS N-channel 40 V 4.5 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie
8.23. Size:820K nxp
psmn4r3-80es.pdf
PSMN4R3-80ES N-channel 80 V, 4.3 m standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d
8.24. Size:210K nxp
psmn4r6-60bs.pdf
PSMN4R6-60BS N-channel 60 V, 4.4 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effic
8.25. Size:206K nxp
psmn4r3-30bl.pdf
PSMN4R3-30BL N-channel 30 V 4.1 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
8.26. Size:708K nxp
psmn4r4-80ps.pdf
PSMN4R4-80PS N-channel 80 V, 4.1 m standard level FET Rev. 01 18 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.
8.27. Size:193K nxp
psmn4r3-100ps.pdf
PSMN4R3-100PS N-channel 100 V 4.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High
8.28. Size:215K nxp
psmn4r6-100xs.pdf
PSMN4R6-100XS N-channel 100V 4.6 m standard level MOSFET in TO220F (SOT186A) Rev. 1 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefit
8.29. Size:216K nxp
psmn4r4-80bs.pdf
PSMN4R4-80BS N-channel 80 V, 4.5 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici
8.30. Size:745K nxp
psmn4r1-30ylc.pdf
PSMN4R1-30YLC N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 12 February 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8
8.31. Size:971K nxp
psmn4r6-60ps.pdf
PSMN4R6-60PS N-channel 60 V, 4.6 m standard level MOSFET in TO220 Rev. 3 18 April 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effi
8.32. Size:819K nxp
psmn4r0-30yl.pdf
PSMN4R0-30YL N-channel 30 V 4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit
8.33. Size:361K nxp
psmn4r0-30yld.pdf
PSMN4R0-30YLD N-channel 30 V, 4.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 October 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs
8.34. Size:716K nxp
psmn4r3-30pl.pdf
PSMN4R3-30PL N-channel 30 V 4.3 m logic level MOSFET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit
8.35. Size:364K nxp
psmn4r4-30mlc.pdf
PSMN4R4-30MLC N-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben
8.36. Size:951K nxp
psmn4r0-40ys.pdf
PSMN4R0-40YS N-channel LFPAK 40 V 4.2 m standard level MOSFET Rev. 02 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
Otros transistores... PSMN4R3-30BL
, PSMN4R3-80BS
, PSMN4R4-30MLC
, PSMN4R4-80BS
, PSMN4R5-40BS
, PSMN4R6-100XS
, PSMN4R6-60BS
, PSMN4R8-100BSE
, 8205A
, PSMN5R0-100XS
, PSMN5R0-80BS
, PSMN5R6-100BS
, PSMN6R0-30YLD
, PSMN6R1-30YLD
, PSMN6R3-120ES
, PSMN6R3-120PS
, PSMN6R5-80BS
.
History: IRFSL7537PBF
| PSMN5R0-100XS
