PSMN5R0-80BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN5R0-80BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 913 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de PSMN5R0-80BS MOSFET
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PSMN5R0-80BS datasheet
psmn5r0-80bs.pdf
PSMN5R0-80BS N-channel 80 V, 5.1 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici
psmn5r0-80ps.pdf
PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
psmn5r0-80ps.pdf
PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to lo
psmn5r0-100es.pdf
PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
Otros transistores... PSMN4R4-30MLC , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , IRFP250N , PSMN5R6-100BS , PSMN6R0-30YLD , PSMN6R1-30YLD , PSMN6R3-120ES , PSMN6R3-120PS , PSMN6R5-80BS , PSMN7R0-100BS , PSMN7R0-30MLC .
History: PSMN5R6-100BS
History: PSMN5R6-100BS
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