PSMN5R0-80BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN5R0-80BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 270 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 913 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
   Paquete / Cubierta: D2PAK

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PSMN5R0-80BS Datasheet (PDF)

..1. Size:214K nxp
psmn5r0-80bs.pdf

PSMN5R0-80BSN-channel 80 V, 5.1 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

4.1. Size:224K philips
psmn5r0-80ps.pdf

PSMN5R0-80PSN-channel 80 V 4.7 m standard level MOSFETRev. 02 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

4.2. Size:726K nxp
psmn5r0-80ps.pdf

6.1. Size:238K philips
psmn5r0-100es.pdf

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

6.2. Size:231K philips
psmn5r0-30yl.pdf

PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

6.3. Size:245K philips
psmn5r0-100ps.pdf

PSMN5R0-100PSN-channel 100 V 5 m standard level MOSFET in TO-220Rev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

6.4. Size:811K nxp
psmn5r0-100es.pdf

PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 3 26 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef

6.5. Size:817K nxp
psmn5r0-30yl.pdf

6.6. Size:216K nxp
psmn5r0-100xs.pdf

PSMN5R0-100XSN-channel 100V 5 m standard level MOSFET in TO220F (SOT186A)Rev. 1 3 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

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