PSMN7R6-100BSE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN7R6-100BSE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 296 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de PSMN7R6-100BSE MOSFET
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PSMN7R6-100BSE datasheet
psmn7r6-100bse.pdf
PSMN7R6-100BSE N-channel 100 V 7.6 m standard level MOSFET in D2PAK 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of NXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot- swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst
psmn7r6-60ps.pdf
PSMN7R6-60PS N-channel 60 V 7.8 m standard level MOSFET Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
psmn7r6-60xs.pdf
PSMN7R6-60XS N-channel 60 V 7.8 m standard level MOSFET in TO220F (SOT186A) 16 December 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency
psmn7r6-60bs.pdf
PSMN7R6-60BS N-channel 60 V 7.8 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie
Otros transistores... PSMN6R1-30YLD , PSMN6R3-120ES , PSMN6R3-120PS , PSMN6R5-80BS , PSMN7R0-100BS , PSMN7R0-30MLC , PSMN7R5-30MLD , PSMN7R5-30YLD , K3569 , PSMN7R6-60BS , PSMN7R6-60XS , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , PSMN8R0-40BS , PSMN8R5-100ES , PSMN8R5-100PS .
History: 2SK2434 | SI3407DV | 2SK2438
History: 2SK2434 | SI3407DV | 2SK2438
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