PSMN7R6-100BSE Todos los transistores

 

PSMN7R6-100BSE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN7R6-100BSE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 296 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

PSMN7R6-100BSE Datasheet (PDF)

 ..1. Size:276K  nxp
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PSMN7R6-100BSE

PSMN7R6-100BSEN-channel 100 V 7.6 m standard level MOSFET in D2PAK18 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whilst

 6.1. Size:213K  philips
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PSMN7R6-100BSE

PSMN7R6-60PSN-channel 60 V 7.8 m standard level MOSFETRev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 6.2. Size:256K  nxp
psmn7r6-60xs.pdf pdf_icon

PSMN7R6-100BSE

PSMN7R6-60XSN-channel 60 V 7.8 m standard level MOSFET in TO220F(SOT186A)16 December 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and power supply equipment.2. Features and benefits High efficiency

 6.3. Size:223K  nxp
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PSMN7R6-100BSE

PSMN7R6-60BSN-channel 60 V 7.8 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME2306BS-G | NVD14N03R

 

 
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