PSMN7R6-60BS Todos los transistores

 

PSMN7R6-60BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN7R6-60BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 149 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 92 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 342 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: D2PAK

 Búsqueda de reemplazo de MOSFET PSMN7R6-60BS

 

Principales características: PSMN7R6-60BS

 ..1. Size:223K  nxp
psmn7r6-60bs.pdf pdf_icon

PSMN7R6-60BS

PSMN7R6-60BS N-channel 60 V 7.8 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie

 4.1. Size:213K  philips
psmn7r6-60ps.pdf pdf_icon

PSMN7R6-60BS

PSMN7R6-60PS N-channel 60 V 7.8 m standard level MOSFET Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.2. Size:256K  nxp
psmn7r6-60xs.pdf pdf_icon

PSMN7R6-60BS

PSMN7R6-60XS N-channel 60 V 7.8 m standard level MOSFET in TO220F (SOT186A) 16 December 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency

 4.3. Size:262K  inchange semiconductor
psmn7r6-60ps.pdf pdf_icon

PSMN7R6-60BS

isc N-Channel MOSFET Transistor PSMN7R6-60PS FEATURES Drain Current I = 65A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

Otros transistores... PSMN6R3-120ES , PSMN6R3-120PS , PSMN6R5-80BS , PSMN7R0-100BS , PSMN7R0-30MLC , PSMN7R5-30MLD , PSMN7R5-30YLD , PSMN7R6-100BSE , IRFP260 , PSMN7R6-60XS , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , PSMN8R0-40BS , PSMN8R5-100ES , PSMN8R5-100PS , PSMN8R5-100XS .

History: PTF4N60 | SST70R380S2 | ZVN3306FTA | MDP1922 | AP4563AGH

 

 
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