PSMN7R8-120ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PSMN7R8-120ESN-channel 120 V 7.9 m standard level MOSFET in I2PAK18 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low swit

PSMN7R8-120PSN-channel 120V 7.9m standard level MOSFET in TO22025 January 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product isdesigned and qualified for use in a wide range of industrial, communications and powersupply equipment.2. Features and benefits High efficiency due to low switching and condu

PSMN7R8-100PSEN-channel 100 V 7.8 m standard level MOSFET withimproved SOA in TO220 package11 August 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET with improved SOA in a TO220 package. Part ofNXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstandsubstantial in-rush and fault condition currents during turn on/off, whilst

PSMN7R0-40LSN-channel QFN3333 40 V 7.0 m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic

PSMN7R0-60YSN-channel LFPAK 60 V 6.4 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

PSMN7R6-60PSN-channel 60 V 7.8 m standard level MOSFETRev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

PSMN7R0-100ESN-channel 100V 6.8 m standard level MOSFET in I2PAK.Rev. 03 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220Rev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

PSMN7R0-100BSN-channel 100V 6.8 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

PSMN7R0-60YSN-channel LFPAK 60 V 6.4 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

PSMN7R5-60YLN-channel 60 V, 7.5 m logic level MOSFET in LFPAK5620 November 2015 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

PSMN7R5-30MLDN-channel 30 V, 7.5 m logic level MOSFET in LFPAK33using NextPowerS3 Technology12 March 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs w

PSMN7R6-100BSEN-channel 100 V 7.6 m standard level MOSFET in D2PAK18 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whilst

PSMN7R0-30YLCN-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technologyTable 1. Quick reference data continuedSymbol Parameter Conditions Min Typ Max UnitDynamic characteristicsQGD gate-drain charge VGS =4.5V; ID =20A; - 2.5 - nCVDS =15V; see Figure 14; see Figure 15QG(tot) total gate charge VGS =4.5V; ID =20A; - 7.9 - nCVDS =15V; see Figure 14; see Fi

PSMN7R0-30MLCN-channel 30 V 7 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefi

PSMN7R6-60XSN-channel 60 V 7.8 m standard level MOSFET in TO220F(SOT186A)16 December 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and power supply equipment.2. Features and benefits High efficiency

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220.17 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc

PSMN7R5-30YLDN-channel 30 V, 7.5 m logic level MOSFET in LFPAK56using NextPowerS3 Technology7 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs

PSMN7R6-60BSN-channel 60 V 7.8 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

isc N-Channel MOSFET Transistor PSMN7R6-60PSFEATURESDrain Current : I = 65A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.