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PSMN7R8-120ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN7R8-120ES

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 349 W

Tensión drenaje-fuente (Vds): 120 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 70 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 167 nC

Tiempo de elevación (tr): 55.3 nS

Conductancia de drenaje-sustrato (Cd): 441 pF

Resistencia drenaje-fuente RDS(on): 0.0079 Ohm

Empaquetado / Estuche: I2PAK

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PSMN7R8-120ES Datasheet (PDF)

1.1. psmn7r8-120es.pdf Size:249K _update_mosfet

PSMN7R8-120ES
PSMN7R8-120ES

PSMN7R8-120ES N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK 18 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits • High efficiency due to low swit

1.2. psmn7r8-120ps.pdf Size:264K _update_mosfet

PSMN7R8-120ES
PSMN7R8-120ES

PSMN7R8-120PS N-channel 120V 7.9mΩ standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits • High efficiency due to low switching and condu

 1.3. psmn7r8-100pse.pdf Size:290K _update_mosfet

PSMN7R8-120ES
PSMN7R8-120ES

PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package 11 August 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst

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