PSMN8R7-80BS Todos los transistores

 

PSMN8R7-80BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN8R7-80BS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 170 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 90 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 44 nC

Tiempo de elevación (tr): 26 nS

Conductancia de drenaje-sustrato (Cd): 296 pF

Resistencia drenaje-fuente RDS(on): 0.0087 Ohm

Empaquetado / Estuche: D2PAK

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PSMN8R7-80BS Datasheet (PDF)

1.1. psmn8r7-80bs.pdf Size:225K _update_mosfet

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R7-80BS N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficienc

1.2. psmn8r7-80ps.pdf Size:216K _philips2

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R7-80PS N-channel 80 V 8.7 m? standard level MOSFET in TO-220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 4.1. psmn8r5-108es.pdf Size:231K _update_mosfet

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R5-108ES N-channel 108 V 8.5 mΩ standard level MOSFET in I2PAK 13 January 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

4.2. psmn8r5-100xs.pdf Size:228K _update_mosfet

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Hi

 4.3. psmn8r5-100ps.pdf Size:250K _update_mosfet

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

4.4. psmn8r0-40bs.pdf Size:227K _update_mosfet

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R0-40BS N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficienc

 4.5. psmn8r5-100es.pdf Size:220K _update_mosfet

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due t

4.6. psmn8r0-40ps.pdf Size:219K _philips2

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R0-40PS N-channel 40 V 7.6 m? standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switch

4.7. psmn8r2-80ys.pdf Size:216K _philips2

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m? standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides

4.8. psmn8r5-60ys.pdf Size:241K _philips2

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R5-60YS N-channel LFPAK 60 V, 8 m? standard level MOSFET Rev. 01 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

4.9. psmn8r3-40ys.pdf Size:212K _philips2

PSMN8R7-80BS
PSMN8R7-80BS

PSMN8R3-40YS N-channel LFPAK 40 V 8.6 m? standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides

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