PSMN9R8-30MLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN9R8-30MLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.7 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
Paquete / Cubierta: LFPAK33
Búsqueda de reemplazo de PSMN9R8-30MLC MOSFET
PSMN9R8-30MLC datasheet
psmn9r8-30mlc.pdf
PSMN9R8-30MLC N-channel 30 V 9.8 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene... See More ⇒
psmn9r5-100ps.pdf
PSMN9R5-100PS N-channel 100 V 9.6 m standard level MOSFET in T0220 Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici... See More ⇒
psmn9r0-30ll.pdf
PSMN9R0-30LL N-channel QFN3333 30 V 9 m logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due ... See More ⇒
psmn9r0-30yl.pdf
PSMN9R0-30YL N-channel 30 V 8 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒
Otros transistores... PSMN8R0-40BS , PSMN8R5-100ES , PSMN8R5-100PS , PSMN8R5-100XS , PSMN8R5-108ES , PSMN8R7-80BS , PSMN9R0-25MLC , PSMN9R5-100BS , CS150N03A8 , PSMNR90-30BL , XP151A11B0MR-G , XP151A12A2MR-G , XP151A13A0MR-G , XP152A11E5MR-G , XP152A12C0MR-G , XP161 , XP161A11A1PR-G .
History: IRFZ24N | 2N60I
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