PSMN9R8-30MLC Todos los transistores

 

PSMN9R8-30MLC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN9R8-30MLC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.7 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
   Paquete / Cubierta: LFPAK33
     - Selección de transistores por parámetros

 

PSMN9R8-30MLC Datasheet (PDF)

 ..1. Size:365K  nxp
psmn9r8-30mlc.pdf pdf_icon

PSMN9R8-30MLC

PSMN9R8-30MLCN-channel 30 V 9.8 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

 8.1. Size:220K  philips
psmn9r5-100ps.pdf pdf_icon

PSMN9R8-30MLC

PSMN9R5-100PSN-channel 100 V 9.6 m standard level MOSFET in T0220Rev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 8.2. Size:397K  philips
psmn9r0-30ll.pdf pdf_icon

PSMN9R8-30MLC

PSMN9R0-30LLN-channel QFN3333 30 V 9 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

 8.3. Size:384K  philips
psmn9r0-30yl.pdf pdf_icon

PSMN9R8-30MLC

PSMN9R0-30YLN-channel 30 V 8 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

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History: CJAB20SN06 | IRFS453 | IPI80N08S2-07 | PSMN7R5-30YLD | IRFI840GPBF | 2P998BC | CS3N100P

 

 
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