PSMN041-80YL Todos los transistores

 

PSMN041-80YL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN041-80YL

Código: *04180

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 64 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 0.5 V

Carga de compuerta (Qg): 21.9 nC

Tiempo de elevación (tr): 11.2 nS

Conductancia de drenaje-sustrato (Cd): 99 pF

Resistencia drenaje-fuente RDS(on): 0.041 Ohm

Empaquetado / Estuche: LFPAK56

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PSMN041-80YL Datasheet (PDF)

1.1. psmn041-80yl.pdf Size:352K _update_mosfet

PSMN041-80YL
PSMN041-80YL

PSMN041-80YL N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due

4.1. psmn040-200w.pdf Size:87K _update_mosfet

PSMN041-80YL
PSMN041-80YL

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 50 A g RDS(ON) ≤ 40 mΩ s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

4.2. psmn040-100mse.pdf Size:347K _update_mosfet

PSMN041-80YL
PSMN041-80YL

PSMN040-100MSE N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourci

 4.3. psmn040-200w.pdf Size:87K _philips2

PSMN041-80YL
PSMN041-80YL

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 A g RDS(ON) ? 40 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology

4.4. psmn045-80ys.pdf Size:233K _philips2

PSMN041-80YL
PSMN041-80YL

PSMN045-80YS N-channel LFPAK 80 V 45 m? standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provid

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