HX2305 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HX2305
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.6 nS
Cossⓘ - Capacitancia de salida: 61 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de HX2305 MOSFET
HX2305 Datasheet (PDF)
hx2305.pdf

SOT-23-3Plastic-Encapsulate TransistorsHX2305MOSFET(P-Channel)FEATURESTrenchFET Power MOSFETMARKING: A5SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 V-3 AID Drain currentPD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHAR
hx2302a.pdf

SOT-23 Plastic-Encapsulate TransistorsHX2302A MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETMARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 12 VID Drain current 2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL C
hx2301.pdf

SOT-23 -3Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel)FEATURES TrenchFET Power MOSFET MARKING: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V-2.8 AID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 E
hx2300a.pdf

SOT-23 Plastic-Encapsulate TransistorsHX2300AMOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsV Drain-Source voltage 20 VDSV Gate-Source voltage 8 VGSI Drain current 2.5 ADP Power Dissipation 1 WDTj Junction Temperature 150
Otros transistores... MMN600DB015B , MMN668A010U1 , FTP03N06NA , ITP09N50A , HX2301 , HX2301A , HX2302 , HX2302A , NCEP15T14 , HX3400 , HX3400A , HX3401 , HX3401A , HX3415 , HX3415A , HD2302 , HD2305 .
History: DH072N07B
History: DH072N07B



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