HX3401A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HX3401A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.6 nS
Cossⓘ - Capacitancia de salida: 61 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET HX3401A
HX3401A Datasheet (PDF)
hx3401a.pdf
SOT-23-3Plastic-Encapsulate TransistorsHX3401A MOSFET(P-Channel)FEATURESTrenchFET Power MOSFETMARKING: A19TMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 V-3 AID Drain currentPD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHA
hx3401.pdf
SOT-23-3 Plastic-Encapsulate Transistors HX3401MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING: X18VMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -30 V VGS Gate-Source voltage 12 V ID Drain current -4.2 A PD Power Dissipation 1.2
hx3400.pdf
SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING: XORBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 30 V VGS Gate-Source voltage 12 VID Drain current 5.8 A PD Power Dissipation 1.4 W
hx3400a.pdf
SOT-23-3 Plastic-Encapsulate TransistorsHX3400AMOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:A09TMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 8 VID Drain current 3.6 APD Power Dissipation 1 WTj Junction Temperature 150 Ts
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918