HD2305 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HD2305
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET HD2305

HD2305 Datasheet (PDF)

..1. Size:2293K high diode
hd2305.pdf

HD2305SOT-23 Plastic-Encapsulate MOSFET P -Channel MOSFET roduct SummaryP ID V(BR)DSS RDS(on)MAX SOT- 2345m@-4.5VD-12V 60m@-2.5V-4.1A90m@-1.8VSFeatures TrenchFET Power MOSFET GApplications Load Switch for Portable Devices DC/DC Converter Marking S5Symbol Value Parameter UnitDrain-Source Voltage VDS -12 V Gate-

9.1. Size:60K sensitron
shd230209.pdf

SENSITRON SHD230209SEMICONDUCTORTECHNICAL DATADATA SHEET 318, REV. AHERMETIC POWER MOSFETP-CHANNEL QUADFEATURES: -100 Volt, 0.60 Ohm, -3.5A MOSFET Fast Switching Low RDS (on) Equivalent to IRF9120 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID -

9.2. Size:60K sensitron
shd230202.pdf

SENSITRON SHD230202SEMICONDUCTORTECHNICAL DATADATA SHEET 319, REV. AHERMETIC POWER MOSFETN-CHANNEL QUADFEATURES: 100 Volt, 0.35 Ohm, 6.2A MOSFET Fast Switching Low RDS (on) Equivalent to IRF120 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 6

9.3. Size:59K sensitron
shd230303.pdf

SENSITRON SHD230303SEMICONDUCTORTECHNICAL DATADATA SHEET 698, REV. -DUAL HERMETIC POWER MOSFETN-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRF230MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 9.0 AmpsCONTINUOUS

9.4. Size:61K sensitron
shd230409.pdf

SENSITRON SHD230409SEMICONDUCTORTECHNICAL DATADATA SHEET 721, REV -HERMETIC POWER MOSFETP-CHANNELFEATURES: -100 Volt, 0.22 Ohm MOSFET Isolated and Hermetically Sealed Simple Drive RequirementsMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - -14 AmpsCON

9.5. Size:60K sensitron
shd230302.pdf

SENSITRON SHD230302 SEMICONDUCTORTECHNICAL DATADATA SHEET 602, REV -HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 0.18 Ohm, 7.4A MOSFET Fast Switching Low RDS (on) Equivalent to IRFE130MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 10.8 AmpsO

9.6. Size:60K sensitron
shd230452.pdf

SENSITRON SHD230452SEMICONDUCTORTECHNICAL DATADATA SHEET 722, REV. -HERMETIC POWER MOSFETP-CHANNELFEATURES: -100 Volt, 0.065 Ohm, -20A MOSFET Fast Switching Low RDS (on) Electrically Equivalent to IRF5210MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID -

9.7. Size:61K sensitron
shd230405.pdf

SHD230405SENSITRON SEMICONDUCTORTECHNICAL DATADATA SHEET 579, REV -HERMETIC POWER MOSFETN-CHANNELFEATURES: 500 Volt, 0.85, Ohm, 5.5Amp MOSFET Isolated and Hermetically Sealed Surface Mount PackageMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 5.5 Amps

9.8. Size:37K sensitron
shd230704.pdf

SENSITRON SHD230704 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4965, REV. - HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES: 100 Volt, 0.18 Ohm, 5A MOSFET Fast Switching Low RDS (on) Characterized at VGS of 6V MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20

9.9. Size:2253K high diode
hd2302.pdf

HD2302SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID SOT- 23V(BR)DSS RDS(on)MAX 60m@4.5VD20V2.1A115m@2.5VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications Extreme fast switchesMarking: S2 Symbol Value Parameter Unit Drain-Source Voltage VDS 20 V Gate-S

9.10. Size:2450K high diode
hd2307.pdf

HD2307SOT-23 Plastic-Encapsulate MOSFET P -Channel MOSFET roduct SummaryP ID V(BR)DSS RDS(on)MAX SOT- 2388m@-10VD-30V-2.7A138m@-4.5VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications Load Switch for Portable Devices DC/DC Converter Marking: S7Symbol Value Unit Paramet

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