TSM1N80SCT Todos los transistores

 

TSM1N80SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM1N80SCT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 5 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 21.6 Ohm
   Paquete / Cubierta: TO-92
 

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TSM1N80SCT Datasheet (PDF)

 ..1. Size:289K  taiwansemi
 tsm1n80cw tsm1n80sct.pdf pdf_icon

TSM1N80SCT

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

 9.1. Size:124K  taiwansemi
 tsm1nb60sct.pdf pdf_icon

TSM1N80SCT

TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per

 9.2. Size:124K  taiwansemi
 tsm1n45dcs.pdf pdf_icon

TSM1N80SCT

Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)() ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process

 9.3. Size:368K  taiwansemi
 tsm1n60s a07.pdf pdf_icon

TSM1N80SCT

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: VN2460N8

 

 
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