TSM1NB60SCT Todos los transistores

 ..1. Size:124K  taiwansemi
 tsm1nb60sct.pdf

TSM1NB60S 600V N-Channel Power MOSFET TO-92 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.25 General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per

 6.1. Size:185K  taiwansemi
 tsm1nb60ch tsm1nb60cp tsm1nb60cw.pdf

TSM1NB60 600V N-Channel Power MOSFET TO-251 TO-252 SOT-223 PRODUCT SUMMARY Pin Definition (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, p

 9.1. Size:289K  taiwansemi
 tsm1n80cw tsm1n80sct.pdf

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

 9.2. Size:124K  taiwansemi
 tsm1n45dcs.pdf

Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)( ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 450 4.25 @ VGS =10V 0.25 4. Gate 2 5. Drain 2 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process

 9.3. Size:368K  taiwansemi
 tsm1n60s a07.pdf

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 9.4. Size:403K  taiwansemi
 tsm1n60l a07.pdf

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)( ) ID (A) Pin Definition 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

 9.5. Size:463K  taiwansemi
 tsm1n45ct tsm1n45cw.pdf

TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize

 9.6. Size:118K  taiwansemi
 tsm1n50ct.pdf

 9.7. Size:303K  taiwansemi
 tsm1n60lch tsm1n60lcp.pdf

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

 9.8. Size:366K  taiwansemi
 tsm1n60sct.pdf

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand