MTP3055EFI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP3055EFI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: ISOWATT220
Búsqueda de reemplazo de MOSFET MTP3055EFI
MTP3055EFI Datasheet (PDF)
mtp3055e.pdf
MTP3055EN-CHANNEL 60V - 0.1 - 12ATO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDMTP3055E 60 V
mtp3055vlrev2a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp3055vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp3055vrev2a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS
mtp3055v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS
mtp3055vl.pdf
June 2000DISTRIBUTION GROUP*MTP3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 VThis N-Channel Logic Level MOSFET has been designedspecifically for low voltage, high speed switching Critical DC electrical parameters specified at elevatedapplications i.e. power supplies and power mo
mtp3055v.pdf
MTP3055VPreferred DevicePower MOSFET12 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge12 AMPEREScircuits where dio
Otros transistores... MNT-LB32N16-C4 , MNT-LB32N20 , MNT-LB32N20-C4 , MTB30N06VL , MTB30P06V , MTB35N06ZL , MTP10N10M , MTP3055E , STP65NF06 , MTP30N05E , MTP30N08M , MTP3N50E , MTP3N60 , MTP3N60FI , MTP6N60 , NDB4050 , NDB4050L .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918