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TSM2N70CH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM2N70CH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: TO-251

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TSM2N70CH Datasheet (PDF)

 ..1. Size:429K  taiwansemi
tsm2n70ch tsm2n70cp tsm2n70cz.pdf

TSM2N70CH
TSM2N70CH

TSM2N70 700V N-Channel Power MOSFET Pin Definition: TO-220 TO-251 TO-252 PRODUCT SUMMARY 1. Gate (IPAK) (DPAK) 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-st

 7.1. Size:127K  taiwansemi
tsm2n7002 a07.pdf

TSM2N70CH
TSM2N70CH

 7.2. Size:85K  taiwansemi
tsm2n7000.pdf

TSM2N70CH
TSM2N70CH

 7.3. Size:143K  taiwansemi
tsm2n7002e a07.pdf

TSM2N70CH
TSM2N70CH

 7.4. Size:181K  taiwansemi
tsm2n7000kct.pdf

TSM2N70CH
TSM2N70CH

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

 7.5. Size:194K  taiwansemi
tsm2n7002kdcu6.pdf

TSM2N70CH
TSM2N70CH

TSM2N7002KD 60V N-Channel MOSFET SOT-363 PRODUCT SUMMARY Pin Definition: 1. Source 2 6. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Pa

 7.6. Size:380K  taiwansemi
tsm2n7002kcx.pdf

TSM2N70CH
TSM2N70CH

TSM2N7002KCX Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2 FEATURES KEY PERFORMANCE PARAMETERS Low On-Resistance PARAMETER VALUE UNIT ESD Protected 2KV VDS 60 V High Speed Switching VGS = 10V 2 Low Voltage Drive RDS(on) (max) VGS = 4.5V 4 Qg 0.4 nC APPLICATION Logic Level translators DC-DC Converter SOT-23 Note

 7.7. Size:237K  taiwansemi
tsm2n7002kcu tsm2n7002kcx.pdf

TSM2N70CH
TSM2N70CH

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (mA) 2. Source 3. Drain 2 @ VGS = 10V 300 60 4 @ VGS = 4.5V 200 Features Block Diagram Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7002KCX RF SOT-23

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