TSM4404CS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TSM4404CS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.7 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET TSM4404CS

TSM4404CS Datasheet (PDF)

..1. Size:242K taiwansemi
tsm4404cs.pdf

TSM4404 30V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 30 @ VGS = 10V 8.5 4. Gate 5, 6, 7, 8. Drain 30 33 @ VGS = 4.5V 8.5 48 @ VGS = 2.5V 5 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC

9.1. Size:385K taiwansemi
tsm4424cs.pdf

TSM4424 20V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 4. Gate 5. Drain 30 @ VGS = 4.5V 4.5 20 35 @ VGS = 2.5V 3.5 45 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

9.2. Size:385K taiwansemi
tsm4426cs.pdf

TSM4426 20V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 30 @ VGS = 4.5V 4.5 4. Gate 5, 6, 7, 8. Drain 20 40 @ VGS = 2.5V 3.5 200 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Specially Des

9.3. Size:370K taiwansemi
tsm4433cs.pdf

TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 90 @ VGS = -4.5V -3.9 4. Gate -20 110 @ VGS = -2.5V -3.2 5, 6, 7, 8. Drain 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

9.4. Size:489K taiwansemi
tsm4431cs.pdf

TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion A

9.5. Size:121K taiwansemi
tsm4410cs.pdf

9.6. Size:494K taiwansemi
tsm4435cs.pdf

TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 21 @ VGS = -10V -9.1 4. Gate -30 35 @ VGS = -4.5V -6.9 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Ba

9.7. Size:295K taiwansemi
tsm4425cs.pdf

TSM4425 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 3. Source 6. Drain 12 @ VGS = -10V -11 4. Gate 5. Drain -30 19 @ VGS = -4.5V -8.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Swi

9.8. Size:305K taiwansemi
tsm4433dcs.pdf

TSM4433D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 90 @ VGS = -4.5V -3.9 4. Gate 2 5. Drain 2 -20 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Lo

9.9. Size:122K taiwansemi
tsm4410dcs.pdf

9.10. Size:202K taiwansemi
tsm4435bcs.pdf

TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 3. Source 6. Drain 21 @ VGS = -10V -9.1 4. Gate 5. Drain -30 35 @ VGS = -4.5V -6.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conv

9.11. Size:214K taiwansemi
tsm4416dcs.pdf

TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 15 @ VGS = 10V 11 30 24 @ VGS = 4.5V 10 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

9.12. Size:141K taiwansemi
tsm4415cs.pdf

Preliminary TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Source 8. Drain 26 @ VGS = -20V -8.0 2. Source 7. Drain -30 3. Source 6. Drain 35 @ VGS = -10V -8.0 4. Gate 5, DrainFeatures Block Diagram Advance Trench Process Technology (1,2,3) High Density Cell Design for Ultra Low On-resistance Applicat

9.13. Size:234K taiwansemi
tsm4436cs.pdf

TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 36 @ VGS = 10V 4.6 4. Gate 5. Drain 60 43 @ VGS = 4.5V 4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/DC

9.14. Size:1399K cn vbsemi
tsm4415cs.pdf

TSM4415CSwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

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