TSM4944DCS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSM4944DCS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 343 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0132 Ohm
Encapsulados: SOP-8
Búsqueda de reemplazo de TSM4944DCS MOSFET
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TSM4944DCS datasheet
tsm4944dcs.pdf
Preliminary TSM4944D 30V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 13.2 @ VGS = 10V 12.2 30 4. Gate 2 5. Drain 2 18 @ VGS = 4.5V 9.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
tsm4946dcs.pdf
TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 @ VGS = 10V 4.5 60 4. Gate 2 5. Drain 2 75 @ VGS = 4.5V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati
tsm4925dcs.pdf
TSM4925D 30V Dual P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m ) ID (A) 3. Source 2 6. Drain 2 25 @ VGS = -10V -7.1 4. Gate 2 5. Drain 2 -30 41 @ VGS = -4.5V -5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati
tsm4936dcs.pdf
TSM4936D 30V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 36 @ VGS = 10V 5.9 30 4. Gate 2 5. Drain 2 53 @ VGS = 4.5V 4.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application
Otros transistores... TSM4436CS, TSM4513DCS, TSM4539DCS, TSM4835CS, TSM4872CS, TSM4886CS, TSM4925DCS, TSM4936DCS, IRFZ24N, TSM4946DCS, TSM4953DCS, TSM4N60CH, TSM4N60CI, TSM4N60CP, TSM4N60CZ, TSM4N80CI, TSM4N80CZ
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