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TSM4953DCS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM4953DCS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOP-8
 

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TSM4953DCS Datasheet (PDF)

 ..1. Size:225K  taiwansemi
 tsm4953dcs.pdf pdf_icon

TSM4953DCS

TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 60 @ VGS = 10V -4.9 4. Gate 2 5. Drain 2 -30 90 @ VGS = 4.5V -3.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

 9.1. Size:503K  taiwansemi
 tsm4925dcs.pdf pdf_icon

TSM4953DCS

TSM4925D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 25 @ VGS = -10V -7.1 4. Gate 2 5. Drain 2 -30 41 @ VGS = -4.5V -5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

 9.2. Size:253K  taiwansemi
 tsm4944dcs.pdf pdf_icon

TSM4953DCS

Preliminary TSM4944D 30V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 13.2 @ VGS = 10V 12.2 30 4. Gate 2 5. Drain 2 18 @ VGS = 4.5V 9.4 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

 9.3. Size:230K  taiwansemi
 tsm4946dcs.pdf pdf_icon

TSM4953DCS

TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 @ VGS = 10V 4.5 60 4. Gate 2 5. Drain 2 75 @ VGS = 4.5V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

MOSTRAR MÁS

Otros transistores... TSM4539DCS , TSM4835CS , TSM4872CS , TSM4886CS , TSM4925DCS , TSM4936DCS , TSM4944DCS , TSM4946DCS , K2611 , TSM4N60CH , TSM4N60CI , TSM4N60CP , TSM4N60CZ , TSM4N80CI , TSM4N80CZ , TSM4N90CI , TSM4N90CZ .

History: 2SJ293 | P3506ETF | AP4415GH | DMP1055UFDB | 2SK3617 | LSC80R980GT | SI8467DB

 

 
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