TSM4N80CI Todos los transistores

 

TSM4N80CI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM4N80CI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: ITO-220
 

 Búsqueda de reemplazo de TSM4N80CI MOSFET

   - Selección ⓘ de transistores por parámetros

 

TSM4N80CI Datasheet (PDF)

 ..1. Size:166K  taiwansemi
 tsm4n80ci tsm4n80cz.pdf pdf_icon

TSM4N80CI

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.1. Size:373K  taiwansemi
 tsm4nd50cp.pdf pdf_icon

TSM4N80CI

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res

 9.2. Size:395K  taiwansemi
 tsm4n90ci tsm4n90cz.pdf pdf_icon

TSM4N80CI

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.3. Size:477K  taiwansemi
 tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf pdf_icon

TSM4N80CI

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a

MOSTRAR MÁS

Otros transistores... TSM4936DCS , TSM4944DCS , TSM4946DCS , TSM4953DCS , TSM4N60CH , TSM4N60CI , TSM4N60CP , TSM4N60CZ , IRFZ48N , TSM4N80CZ , TSM4N90CI , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI , TSM4NB60CP , TSM4NB60CZ , TSM4ND50CP .

History: AP65SL045AFWL | AOB66920L | VB9220 | AUIRFZ44NL | SM1A00NSW | SIHF730AL | VBZE30N10

 

 
Back to Top

 


 
.