TSM8N50CH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TSM8N50CH Datasheet (PDF)

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TSM8N50 500V N-Channel MOSFET TO-251 TO-252 PRODUCT SUMMARY Pin Definition: (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 7.2 Features Block Diagram Low On-Resistance. High power and current handing capability. Ordering Information Part No. Package Packing TSM8N50CH C5G TO-251 75pcs / Tube TSM8N50CP ROG TO-252

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TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

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TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide sup

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