BUK753R5-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK753R5-60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 293 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 851 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de BUK753R5-60E MOSFET
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BUK753R5-60E datasheet
buk753r5-60e.pdf
BUK753R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe
buk753r1-40b buk763r1-40b.pdf
BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta
buk753r4-30b buk763r4-30b.pdf
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa
buk753r1-40e.pdf
BUK753R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe
Otros transistores... BUK7505-30A , BUK7514-60E , BUK751R6-30E , BUK751R8-40E , BUK7524-55A , BUK752R3-40E , BUK752R7-60E , BUK753R1-40E , EMB04N03H , BUK753R8-80E , BUK754R7-60E , BUK755R4-100E , BUK758R3-40E , BUK7605-30A , BUK7613-100E , BUK7613-60E , BUK7614-55 .
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