2SK1013-01 Todos los transistores

 

2SK1013-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1013-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO3P

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2SK1013-01 Datasheet (PDF)

1.1. 2sk1013-01.pdf Size:133K _update-mosfet

2SK1013-01
2SK1013-01



3.1. 2sk1013.pdf Size:203K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1013 DESCRIPTION ·Drain Current –I =13A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G

 4.1. 2sk1015-01.pdf Size:173K _update

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2SK1013-01



4.2. 2sk1014-01.pdf Size:254K _update

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2SK1013-01

FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee ± Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings

 4.3. 2sk1015.pdf Size:63K _update

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2SK1013-01

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage ±30 V G

4.4. 2sk1010-01.pdf Size:167K _update

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 4.5. 2sk1017-01.pdf Size:138K _update

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4.6. 2sk1016-01.pdf Size:176K _update

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4.7. 2sk1011-01.pdf Size:134K _update

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4.8. 2sk1012-01.pdf Size:169K _update

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4.9. 2sk1018.pdf Size:57K _update

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4.10. 2sk1016.pdf Size:1624K _fuji

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2SK1013-01

4.11. 2sk1014.pdf Size:203K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION ·Drain Current –I =12A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

4.12. 2sk1011.pdf Size:202K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1011 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G

4.13. 2sk1015.pdf Size:203K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION ·Drain Current –I =12A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

4.14. 2sk1010.pdf Size:199K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1010 DESCRIPTION ·Drain Current –I =6A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

4.15. 2sk1016.pdf Size:203K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1016 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

4.16. 2sk1012.pdf Size:203K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1012 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS G

4.17. 2sk1017.pdf Size:203K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1017 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

4.18. 2sk1018.pdf Size:203K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1018 DESCRIPTION ·Drain Current –I =18A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

4.19. 2sk1019.pdf Size:200K _inchange_semiconductor

2SK1013-01
2SK1013-01

isc N-Channel MOSFET Transistor 2SK1019 DESCRIPTION ·Drain Current –I =35A@ T =25℃ D C ·Drain Source Voltage- : V =450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

Otros transistores... 2SJ551 , 2SJ552 , 2SJ553 , 2SJ554 , 2SJ555 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2N7000 , 2SK1017 , 2SK1019 , 2SK105 , 2SK1059 , 2SK1060 , 2SK1109 , 2SK1122 , 2SK1123 .

 

 
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