BUK761R4-30E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK761R4-30E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 324 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52.3 nS
Cossⓘ - Capacitancia de salida: 1710 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00145 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de BUK761R4-30E MOSFET
BUK761R4-30E Datasheet (PDF)
buk761r4-30e.pdf

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buk761r5-40e.pdf

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buk761r7-40e.pdf

BUK761R7-40EN-channel TrenchMOS standard level FET4 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated
Otros transistores... BUK7605-30A , BUK7613-100E , BUK7613-60E , BUK7614-55 , BUK76150-55A , BUK7615-100A , BUK7616-55A , BUK761R3-30E , 20N60 , BUK761R5-40E , BUK761R6-40E , BUK761R7-40E , BUK762R0-40E , BUK762R4-60E , BUK762R6-40E , BUK762R6-60E , BUK762R9-40E .
History: MDD7N20CRH | BUK7M5R0-40H | STS15N4LLF5 | MDF18N50BTH | MDF5N50BTH | MDU1512RH | 2SK3440
History: MDD7N20CRH | BUK7M5R0-40H | STS15N4LLF5 | MDF18N50BTH | MDF5N50BTH | MDU1512RH | 2SK3440



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