BUK763R8-80E Todos los transistores

 

BUK763R8-80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK763R8-80E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 169 nC
   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 840 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: D2PAK

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BUK763R8-80E Datasheet (PDF)

 ..1. Size:236K  nxp
buk763r8-80e.pdf

BUK763R8-80E
BUK763R8-80E

BUK763R8-80EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant

 7.1. Size:104K  philips
buk763r4-30.pdf

BUK763R8-80E
BUK763R8-80E

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

 7.2. Size:323K  philips
buk753r1-40b buk763r1-40b.pdf

BUK763R8-80E
BUK763R8-80E

BUK75/763R1-40BTrenchMOS standard level FETRev. 02 16 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK753R1-40B in SOT78 (TO-220AB)BUK763R1-40B in SOT404 (D2-PAK).1.2 Features Very low on-sta

 7.3. Size:108K  philips
buk753r4-30b buk763r4-30b.pdf

BUK763R8-80E
BUK763R8-80E

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

 7.4. Size:978K  nxp
buk763r1-40b.pdf

BUK763R8-80E
BUK763R8-80E

BUK763R1-40BN-channel TrenchMOS standard level FETRev. 03 8 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

 7.5. Size:947K  nxp
buk763r6-40c.pdf

BUK763R8-80E
BUK763R8-80E

BUK763R6-40CN-channel TrenchMOS standard level FETRev. 04 16 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 7.6. Size:207K  nxp
buk763r9-60e.pdf

BUK763R8-80E
BUK763R8-80E

BUK763R9-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.7. Size:207K  nxp
buk763r1-60e.pdf

BUK763R8-80E
BUK763R8-80E

BUK763R1-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 7.8. Size:826K  nxp
buk763r4-30b.pdf

BUK763R8-80E
BUK763R8-80E

BUK763R4-30BN-channel TrenchMOS standard level FETRev. 2 21 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

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