BUK769R6-80E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK769R6-80E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 182 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32.7 nS
Cossⓘ - Capacitancia de salida: 356 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0096 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de BUK769R6-80E MOSFET
- Selecciónⓘ de transistores por parámetros
BUK769R6-80E datasheet
buk769r6-80e.pdf
BUK769R6-80E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti
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BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 02 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS techno
buk7615-100a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the d
buk7506-55a buk7606-55a.pdf
BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10
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Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench tec
buk7605-30a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the dev
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BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS te
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Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 68 A trench technology the devi
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BUK75/7607-55B TrenchMOS standard level FET Rev. 01 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D2-PAK). 1.2 Features Very low on-stat
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BUK7575-55A; BUK7675-55A TrenchMOS standard level FET Rev. 01 8 December 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7575-55A in SOT78 (TO-220AB) BUK7675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec
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BUK7516-55A; BUK7616-55A TrenchMOS standard level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec
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BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS te
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buk7615-100a.pdf
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BUK7631-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti
buk7611-55a.pdf
BUK7611-55A N-channel TrenchMOS standard level FET Rev. 02 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe
buk7640-100a.pdf
BUK7640-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F
buk7623-75a.pdf
BUK7623-75A N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
buk7635-55a.pdf
BUK7635-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
buk764r2-80e.pdf
BUK764R2-80E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti
buk7606-55b.pdf
BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 21 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe
buk768r1-40e.pdf
BUK768R1-40E N-channel TrenchMOS standard level FET Rev. 1.1 10 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 complian
buk765r0-100e.pdf
BUK765R0-100E N-channel TrenchMOS standard level FET Rev. 2 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant
buk7610-100b.pdf
BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and ben
buk7675-55a.pdf
BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101
buk7613-75b.pdf
BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
buk762r9-40e.pdf
BUK762R9-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk7635-100a.pdf
BUK7635-100A N-channel TrenchMOS standard level FET Rev. 02 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1
buk764r0-75c.pdf
BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut
buk765r2-40b.pdf
BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 3 22 November 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.
buk7608-55a.pdf
BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe
buk762r6-60e.pdf
BUK762R6-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk7610-55al.pdf
BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a
buk764r0-40e.pdf
BUK764R0-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk763r1-60e.pdf
BUK763R1-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk768r3-60e.pdf
BUK768R3-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk7618-55.pdf
BUK7618-55 N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fea
buk762r6-40e.pdf
BUK762R6-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk7628-100a.pdf
BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F
buk7613-100e.pdf
BUK7613-100E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti
buk764r0-55b.pdf
BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7611-55b.pdf
BUK7611-55B N-channel TrenchMOS standard level FET Rev. 3 31 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2
buk763r4-30b.pdf
BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F
buk761r4-30e.pdf
BUK761R4-30E N-channel TrenchMOS standard level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repeti
buk762r7-30b.pdf
BUK762R7-30B N-channel TrenchMOS standard level FET Rev. 04 8 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe
buk761r6-40e.pdf
BUK761R6-40E N-channel TrenchMOS standard level FET 5 September 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rate
buk7675-55a.pdf
BUK7675-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS
Otros transistores... BUK764R2-80E , BUK764R4-60E , BUK765R0-100E , BUK765R3-40E , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E , IRF630 , BUK7E13-60E , BUK7E1R6-30E , BUK7E1R8-40E , BUK7E1R9-40E , BUK7E2R3-40E , BUK7E2R6-60E , BUK7E3R1-40E , BUK7E3R5-60E .
History: IPA65R380E6
History: IPA65R380E6
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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